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  1 h igh diode semiconductor sot- 23 limiting values (absolute maximum rating) applications device descripsion ? marking features z shunt regulator z high-current shunt regulator z precision current limiter sot -23 encapsulate adjust able reference source TL432 1 2 3 1. refe rence 2. cathode 3. anod e z z z z z 432 z the TL432 is a three-terminal s hunt voltage reference providing a highly accurance 1.24v. the TL432 t hermal stability and wide operating current, makes is sritable for all vari ety of applications that are looking for a low cost solution with high performance. low dynamic output impedance the effective temperature compensation in the working low output noise voltage fast on -state response sink current capab ility of 0.1ma to100ma range of full temperature paramete r symbol value units cathode voltage v ka 18 v cathode current range (continuous) i ka 100 ma reference lnput current range i ref 6 a power dissipation p d 350 mw thermal resistance from junction to ambient r ja 3 5 7 /w operating temperature t opr 0 ~ + 70 junction temperature t j 150 storage temperature t stg -65~+150
2 h igh diode semiconductor electrical ch aracteristics (t a =25 unless otherwise noted) i k v ref v ka input figure 1. test circuit for v ka = v ref input i k r2 i ref v ref v ka r1 figure 2. test circuit for v ka > v ref v ka  v ref  1  r1 r2   i ref  r1 i off input v ka figure 3. test circuit for i off parameter symbol test conditions min typ max unit reference input voltage (fig 1) v ref v ka =v ref , i ka =10ma 1.2214 1.2586 v deviation of reference voltage over full temperature range (fig 1) v ref(dev) v ka =v ref , i ka =10ma 0 t a 70 16 mv ratio of change in reference input voltage to the change in cathode voltage (fig 2) v ref /v ka i ka =10ma, v ka =1.25v~15v 2.4 mv/v deviation of reference input current over full temperature range (fig 2) l ref /t l ka =10ma, r 1 =10 k ? , r 2 = , 0 t a 70 0.6 a minimum cathode current for regulation (fig 1) i ka(min) v ka =v ref 0.1 ma off-state cathode current(fig 3) i off v ka =15v,v ref =0 0.5 a dynamic impedance z ka v ka =v ref, l ka =0.1 ~20ma, f 1.0 k hz 0.5 ? classification of v ref rank 1% 1.5% range 1.2 2 76~1.2524 1.2214~1.2586
3 h igh diode semiconductor typical characteristics -1.5 -1.0 -0.5 0.0 0.5 1.0 1.5 -100 -50 0 50 100 -40-20 0 20406080100 1175 1200 1225 1250 1275 1300 -1.0 -0.5 0.0 0.5 1.0 1.5 -200 -100 0 100 200 300 400 v ka =v ref t a =25 cathode current versus cathode voltage v ka , cathode voltage (v) i k , cathode current (ma) v ka =v ref i k =10ma reference input voltage versus ambient temperature v ref , reference input voltage (mv) t a , ambient temperature ( ) v ka =v ref t a =25 cathode current versus cathode voltage i k , cathode current (ua) v ka , cathode voltage (v) i ka(min) ka ka ref test circuit for v ka =v ref
4 h igh diode semiconductor typical characteristics -40-20 0 20406080100 0 5 10 15 20 25 30 35 40 03691 21 5 -20 -16 -12 -8 -4 0 -40 -20 0 20 40 60 80 100 0 100 200 300 400 500 v ka =15v v ref =0v off-state cathode current versus ambient temperature t a , ambient temperature ( ) i off , off-state cathode current (na) i k =10ma t a =25 change in reference input voltage versus cathode voltage v ref , reference input voltage (mv) v ka , cathode voltage (v) i k =10ma r 1 =10k ? reference input current versus ambient temperature t a , ambient temperature ( ) i ref , reference input current (na) test circuit for v ka =v ref ( 1+r1/r2 ) +r1*i ref test circuit for i ref test circuit for i off
5 jshd jshd h igh diode semiconductor package outline dimensions sot-23 suggested pad layout sot-23
reel taping specifications for surface mount devices-sot-23 h igh diode semiconductor 30 6


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